Electrical characteristics of silicon pixel detectors

I Gorelov, G Gorfine,M Hoeferkamp,V Mata-Bruni,G Santistevan,S.C Seidel, A Ciocio, K Einsweiler,J Emes,M Gilchriese,A Joshi,S Kleinfelder,R Marchesini,F McCormack,O Milgrome,N Palaio,F Pengg,J Richardson,G Zizka,M Ackers,G Comes,P Fischer,M Keil,G Martinez,I Peric, O Runolfsson,T Stockmanns,J Treis, N Wermes,C Gößling,F Hügging,J Klaiber-Lodewigs,O Krasel,J Wüstenfeld,R Wunstorf, D Barberis,R Beccherle, C Caso,M Cervetto,G Darbo,G Gagliardi,C Gemme, P Morettini,P Netchaeva,B Osculati, L Rossi, E Charles,D Fasching,L Blanquart,P Breugnon,D Calvet,J.-C Clemens, P Delpierre,G Hallewell,D Laugier,T Mouthuy, A Rozanov,I Valin,A Andreazza,M Caccia,M Citterio,T Lari, C Meroni, F Ragusa,C Troncon,G Vegni, G Lutz,R.H Richter,T Rohe,G.R Boyd,P.L Skubic,P Šı́cho,L Tomasek, V Vrba, M Holder,M Ziolkowski, D Cauz,M Cobal-Grassmann,S D’Auria,B De Lotto,C del Papa, H Grassmann,L Santi, K.H Becks, G Lenzen,C Linder

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment（2002）

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摘要

Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.

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关键词

Silicon,Pixel,Semiconductor,Tracking

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