Arithmetic Unit Design Using 180nm Tsv-Based 3d Stacking Technology

2009 IEEE INTERNATIONAL CONFERENCE ON 3D SYSTEMS INTEGRATION(2009)

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摘要
We describe the design of two three dimensional arithmetic units (a 3D adder and a 3D multiplier) that are implemented using through-silicon-via 3D stacking technology. Compared to their 2D counterparts, our 3D adder incurs 10.6-34.3% less delay and 11.0-46.1% less energy when the width increases from 12-bit to 72-bit; the 32x32 3D multiplier incurs 14.4% less delay and 6.8% less energy, according to the post place and route results. The prototype chip including the implementations of a 3D adder, a 3D multiplier, and simple test interface has been delivered for fabrication in MIT Lincoln Laboratory, using their 3-tier SOI based 3D technology.
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关键词
chip,place and route,radiation detectors,three dimensional,prototypes,silicon on insulator,through silicon via,adders,integrated circuit design
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