Liquid phase deposited silicon oxide with lower boron impurity grown on gallium nitride by temperature-difference method

This study investigates the growth of silicon oxide film on gallium nitride using hydrosilicofluoric acid and silica gel by the temperature-difference liquid-phase deposition. In the conventional liquid phase deposition, the boric acid is used as fluorine scavenger to prompt silicon oxide deposition and it also acts as an impurity in the oxide film. The better metal- oxide-semiconductor diode electrical characteristics can be obtained by the temperature-difference method with lower boric acid incorporation and higher deposition rate. Compared with the leakage current density of the conventional and temperature-difference methods, it can be much improved from 9093 x 10(-2) A/cm(2) to 508 x 10(-4) A/cm(2) at +2 MV/cm and from 1.35 x 10(-2) A/cm(2) to 5.15 x 10(-4) A/cm(2) at -1 MV/cm. The effective oxide charges is improved from 3088 x 10(11) cm(-2) to 2.27 x10(11) cm(-2).