Resonant tunnelling through single donor states in GaAs/AlAs/GaAs devices

Marta Gryglas,Michal Baj,Benoit Jouault,Giancarlo Faini,Antonella Cavanna

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES（2003）

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摘要

Our paper is a first step towards tunnelling spectroscopy of individual X-minimum-related shallow donors. We investigated I-V characteristics of submicrometer mesa structures made on GaAs/AlAs/GaAs wafers delta-doped with silicon in the middle of AlAs layer. At 4.2 K and magnetic field up to 6 T we resolved well-separated peaks attributed to resonant tunnelling via individual donors. (C) 2002 Elsevier Science B.V. All rights reserved.

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resonant tunnelling,X-minimum-related donor,single impurity

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