GaN Schottky Barrier Photodetectors

S. J. Chang,S. M. Wang,P. C. Chang,C. H. Kuo,S. J. Young,T. P. Chen,S. L. Wu,B. R. Huang

Sensors Journal, IEEE（2010）

引用 12|浏览19

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摘要

We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D*) were 7.00 × 10-10 W and 2.26 × 109 cmHz0.5 W-1, respectively, for the PD prepared on nanorods template. With the same -2 V bias, it was found that NEP and D* were 3.56 × 10-6 W and 4.44 × 105 cmHz0.5 W-1, respectively, for the PD prepared on a conventional sapphire substrate.

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关键词

III-V semiconductors,Schottky barriers,gallium compounds,leakage currents,nanorods,photoconducting devices,photodetectors,wide band gap semiconductors,GaN,Schottky barrier photodetectors,leakage current suppression,nanorods template,noise equivalent power,normalized detectivity,power 0.0000000007 W,power 0.00000356 W,sapphire substrate,ultraviolet-to-visible rejection ratio,voltage -2 V,ultraviolet,Nanorod template,noise,photodetector

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