Effect of the sputtering parameters on the structure and properties of Cu 3 N thin film materials

Copper nitride (Cu 3 N) thin films were successfully deposited on glass substrates by reactive radio frequency magnetron sputtering. The effects of sputtering parameters on the structure and properties of the films were studied. The experimental results show that with increasing of RF power and nitrogen partial pressure, the preferential crystalline orientation of Cu 3 N film is changed from (111) to (100). With increasing of substrate temperature from 70 °C to 200 °C, the film phase is changed from Cu 3 N phase to Cu. With increasing sputtering power from 80 W to 120 W, the optical energy decreases from 1.85 eV to 1.41 eV while the electrical resistivity increases from 1.45 ×10 2 Ω · cm to 2.99 × 10 3 Ω · cm, respectively.