Luminescence properties of Ammonium Silicon Fluoride films prepared by vapour etching technique

Photoluminescence (PL) properties of Ammonium Silicon Fluoride samples prepared by vapour etching technique are investigated with respect to excitation energy, excitation intensity and temperature. Ageing effect at ambient conditions is also examined by Fourier Transform Infrared Spectroscopy. PL peak maximum blue shifts as the excitation intensity increases and saturates at 2.106 eV. Temperature-dependent variations in PL peak energies and intensities cannot be thoroughly elucidated via Quantum Confinement model alone and require consideration of recombination rates at Si–SiOx interface. Temperature dependence of integrated PL intensity is treated by a three-component functional form.