Detectors for monolithic optoelectronics

D. J. Jackson,Jack Y Josefowicz,D. B. Rensch,D. L. Persechini

FIBER AND INTEGRATED OPTICS（1988）

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摘要

Abstract In this paper, we present data on the electrical characteristics and the optical response of photodetectors integrated on GaAs substrates with FET devices. We compare the differences between devices fabricated on globally implanted areas versus the undoped semi-insulating regions of the same wafer.

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关键词

photodetectors,optoelectronics,gallium arsenide,sensors

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