Resistive Switching Mechanisms ofV-Doped$hboxSrZrO_3$Memory Films

C.-C. Lin,B.-C. Tu,C.-C. Lin,C.-H. Lin,T.-Y. Tseng

IEEE Electron Device Letters（2006）

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摘要

The resistive switching behaviors of sputtered V-doped SrZrO3 (V:SZO) memory films were investigated in this letter. The current states of the memory films were switched between high current state (H-state) and low current state (L-state). The resistance ratio of the two current states was over 1000 at a read voltage. The switching mechanism from L- to H-state corresponds to the formation of curr...

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关键词

Voltage,Nonvolatile memory,Electrodes,Stability,Random access memory,Power semiconductor switches,Semiconductor films,Furnaces,Radio frequency,Chaos

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