True Energy-Performance Analysis of the MTJ-Based Logic-in-Memory Architecture (1-Bit Full Adder)

IEEE Transactions on Electron Devices(2010)

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摘要
The use of spin-transfer torque (STT) devices for memory design has been a subject of research since the discovery of the STT on MgO-based magnetic tunnel junctions (MTJs). Recently, MTJ-based computing architectures such as logic-in-memory have been proposed and claim superior energy-delay performance over static CMOS. In this paper, we conduct exhaustive energy-performance analysis of an STT-MTJ...
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关键词
Magnetic tunneling,CMOS integrated circuits,Writing,Adders,Transistors,Resistance,Switches
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