A 1- mu m polysilicon self-aligning bipolar process for low-power high-speed integrated circuits
IEEE Electron Device Letters（1989）
关键词
VLSI,bipolar integrated circuits,elemental semiconductors,incoherent light annealing,integrated circuit technology,ion implantation,silicon,1 micron,14 GHz,15 GHz,15 fJ,30 fJ,43 ps,Si,Si:B,breakdown voltages,current mode logic gate delay,emitter drive-in,emitter size,epilayer doping,lithography,low energy implantation,low-power high-speed integrated circuits,polysilicon self-aligning bipolar process,power-delay product,rapid thermal annealing,shallow base emitter profiles,speed-power performance,static frequency divider,transit frequency
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