Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate

Epitaxial 4H-SiC layers grown at 10-18 mum/h in a vertical radiant-heating reactor have been characterized in terms of their morphology, purity and device performance. Through optimizations of pre-growth hydrogen etching and growth parameters, a good morphology is reproducibly obtained even for thick levers. Photoluminescence and DLTS measurements have been performed for epitaxial layers to determine impurity levels and the intrinsic defect density, and the growth parameters required to obtain a low background doping and smooth surface are discussed. Edge-terminated Ni/4H-SiC Schottky barrier diodes have been fabricated, and electrical performance of the devices is demonstrated.