Steep-Slope Devices: From Dark to Dim Silicon

Swaminathan, K.,Kultursay, E.,Saripalli, V.,Narayanan, V.

IEEE Micro（2013）

引用 58|浏览0

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摘要

Although the superior subthreshold characteristics of steep-slope devices can help power up more cores, researchers still need CMOS technology to accelerate sequential applications, because it can reach higher frequencies. Device-level heterogeneous multicores can give the best of both worlds, but they need smart resource management to realize this promise. In this article, the authors discuss device-level heterogeneous multicores and various resource-management schemes for reaching higher energy efficiency.

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关键词

CMOS integrated circuits,microprocessor chips,multiprocessing systems,power aware computing,CMOS technology,device-level heterogeneous multicores,energy efficiency,resource-management schemes,sequential applications,smart resource management,steep-slope devices,subthreshold characteristics,CMOS-TFET heterogeneous architectures,DVFS,dark silicon,dim silicon,dynamic voltage and frequency scaling,power partitioning,steep-slope devices,thread migration

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