Mixed signal integrated circuits based on GaAs HEMT's
IEEE Transactions on Very Large Scale Integration (VLSI) Systems(1998)
摘要
During the past five years numerous mixed signal integrated circuits (IC's) have been designed, processed, and characterized based on our 0.2 µm gate length AlGaAs/GaAs quantum well HEMT technology. Utilizing the inherent advantages of the AlGaAs/GaAs material system, optical, analog, microwave, and digital functions have been integrated monolithically. Examples are a chip set for 40 Gb/s optoelectronic data transmission systems, 15 and 34 GHz PLL's, a 35 GHz phase shifter for phased array antenna applications, a 2-kb ROM with subnanosecond access time for direct digital signal synthesis, and a 6-k gate array.
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关键词
digital function,array antenna application,mixed signal,GaAs HEMT,integrated monolithically,direct digital signal synthesis,GHz phase shifter,GaAs material system,6-k gate array,m gate length AlGaAs,GHz PLL,integrated circuit
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