A Voltage-Mode Testing Method to Detect IDDQ Defects in Digital Circuits
Seville（2009）
摘要
A novel method to detect a defective IDDQ on top of highbackground current is proposed. Instead of the conventionalapproach that measures the quiescent current drawn by thecircuit-under-test (CUT), the proposed method is based on themeasurement of the voltage drop in a resistor spatially laid-outalong the CUT. Resistive shorts with a defective current of 2.14 mAon top of 83.11 mA of leakage current have been detected in a65nm CMOS test chip with controllable leakage. The proposedmethod also provides facilities to locate the defect in addition to detect it.
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关键词
resistive short,maon top,resistor spatially laid-outalong,novel method,highbackground current,voltage drop,digital circuits,controllable leakage,defective iddq,voltage-mode testing method,detect iddq defects,a65nm cmos test chip,cmos integrated circuits,chip,test methods,voltage,decision support systems,leakage current,iddq testing,voltmeters,data mining,neodymium
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