Power Dissipation Associated To Internal Effect Transitions In Static Cmos Gates

Alejandro Millan,Jorge Juan,Manuel J. Bellido,David Guerrero,Paulino Ruiz-De-Clavijo,Julian Viejo

INTEGRATED CIRCUIT AND SYSTEMS DESIGN: POWER AND TIMING MODELING, OPTIMIZATION AND SIMULATION（2009）

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摘要

Power modeling techniques have traditionally neglected the main part of the energy consumed in the internal nodes of static CMOS gates: the power dissipated by input transitions that do not produce output switching. In this work, we present an experimental set-up that shows that this power component may contribute tip to 59% of the total power consumption of a gate in modern technologies. This fact makes very important to include it into any accurate power model.(1)

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关键词

accurate power model,power component,power modeling technique,total power consumption,experimental set-up,input transition,internal node,main part,modern technology,output switching,Internal Effect Transitions,Power Dissipation Associated,Static CMOS Gates

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