Measurement of second-order nonlinear optical susceptibility of cBN crystal synthesized at high pressure and high temperature

We demonstrate a transverse electro-optical modulator based on a tiny and irregular octahedral wafer of cubic boron nitride (cBN) crystal that is prepared by hexagonal boron nitride at high pressure and high temperature using nitride as the catalyst. A continuous wave semiconductor laser at the wavelength of 650nm is used as a light source. A novel electrode fabrication is designed, a developed method different from the conventional transverse electro-optical modulator is introduced and the expression of the intensity of output beam is thought over. We obtain the half-wave voltage based on experiments of transverse electro-optical modulation. The second-order nonlinear optical susceptibility @g"i"j"k^(^2^)(@w,0)=1.919x10^-^1^2m/V of cBN crystal is calculated by means of the half-wave voltage.