A New Methodology for Interconnect Parasitics Extraction Considering Photo-Lithography Effects

Even with the wide adaptation of resolution enhancement techniques in sub-wavelength lithography, the geometry of the fabricated interconnect is still quite different from the drawn one. Existing Layout Parasitic Extraction (LPE) tools assume perfect geometry, thus introducing significant error in the extracted parasitic models, which in turn cases significant error in timing verification and signal integrity analysis. Our simulation shows that the RC parasitics extracted from perfect GDS-II geometry can be as much as 20% different from those extracted from the post litho/etching simulation geometry. This paper presents a new LPE methodology and related fast algorithms for interconnect parasitic extraction under photo-lithographic effects. Our methodology is compatible with the existing design flow. Experimental results show that the proposed methods are accurate and efficient.