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论文共 7 篇作者统计合作学者相似作者

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A design methodology for highly reliable operation for 2T0C DRAM application based on IGZO CAA FeFETs
Jing Liang,Peng Yuan, Yong Yu,Jinjuan Xiang,Zhengyong Zhu, Menglong Zhou, Feng Shao, Yanan Lu,Jin Dai, Sangdon Yi,Guilei Wang,Jing Zhang,
Japanese Journal of Applied Physics (2024)
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Improved Multi-bit Statistics of Novel Dual-gate IGZO 2T0C DRAM with In-cell VTH Compensation and ΔVSN/ΔVDATA Boosting Technique
Kaifei Chen,Zhengyong Zhu,Wendong Lu, Menggan Liu,Fuxi Liao, Zijing Wu,Jiebin Niu,Bok-Moon Kang, Wang Dan, Xie-Shuai Wu,Ming-Xu Liu, Yong Yu,
2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)
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Novel 2T DRAM by Storing Data in One Alternative Gate of a Double-Gate Transistor with a Low-leakage Oxide Transistor
Zheng-Yong Zhu,Bok-Moon Kang, Wang Dan,Xie-Shuai Wu, Joohwan Son, Yong Yu,De-Yuan Xiao,Jin Dai,Gui-Lei Wang,Abraham Yoo,Kan-Yu Cao,Chao Zhao
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)pp.1-3, (2022)
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Investigation of Parasitic Capacitance Effects in V-GAA Transistor via 3D PEX Methodology
Hong-Gang Liang, Yong Yu,De-Yuan Xiao,Jing-Fei Zhu, Jing Liang,Lan-Song Ba, Ji-Bin Leng,Zheng-Yong Zhu,Yong-Jie Li,Xing-Song Su, Kobe Weng, Li Bai,
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)pp.1-3, (2022)
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