Yun-Hsuan Lin

Y. M. Lin was born in Taipei, Taiwan, R.O.C., in 1968. He received the B.S. degree in electrical engineering from the Tatung Institute of Technology in 1991, the M.S. degree in electrical engineering from the National Hsin-Hua University in 1993, and Ph.D. degree in electronic engineering from the National Chiao-Tung University, Hsinchu, Taiwan, in 1997. His Ph.D. dissertation focused on process issues of interpoly-silicon dielectric and intermetal dielectric and their impacts on device reliability. From 1994 to 1995, he worked on intermetal dielectric development for 0.35–$\mu$ m CMOS at Taiwan Semiconductor Manufacturing Company (TSMC), Hinchu. Since September 1999, he is responsible for gate quality silicon and high-k gate dielectric for 0.1–$\mu$ m CMOS at TSMC. He is now with Sematech for process development and reliability of gate quality silicon.