Weiwei Yan - Institute of Microelectronics, the Chinese Academy of Sciences

基本信息

Career Trajectory

Bio

Weiwei Yan received the B.Sc. degree from the North University of China, in 2009, and the M.Sc. degree from the Beijing University of Technology, in 2012. She is currently an Assistant Professor with the Si-Device Center, Institute of Microelectronics, Chinese Academy of Sciences. Her research interests include SOI technology and single event effect.

Research Interests

Papers共 47 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

A 6-Ghz 78-Fs $_{\mathrm{rms}}$ Double-Sampling PLL with Low-Ripple Bootstrapped DSPD and Retimer-Less MMD Achieving $-$ 92-Dbc Reference Spur and $-$ 258-Db FOM

Hongyu Ren,Zunsong Yang,Yunbo Huang,Chaoping Feng, Tianle Chen,Xinming Zhang,Xianghe Meng,Weiwei Yan, Weidong Zhang,Tetsuya Iizuka,Yong Chen,Pui-In Mak,Zhengsheng Han,Bo Li

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERSno. 5 (2024): 548-551

Cited2Views0EIWOSBibtex

Study on Induced Radioactivity and Individual Dose Evaluation in Gantry Room for Varian ProBeam Proton Therapy System

Changli Luo,Wuyuan Li,Yang Li, Xilong Han, Bo Yang,Youwu Su,Shakhboz Khasanov,Xuebo Liu,Wang Mao,Weiwei Yan

Applied Radiation and Isotopes（2024）

Cited0Views0WOSBibtex

A Precision Current Sensing Circuit with Chopper Amplifier of Symmetric Topology

Tian Han,Fazhan Zhao,Ximing Fu,Xiaowu Cai,Weiwei Yan,Haitao Zhao,Wenxin Zhao,Bo Li

MICROELECTRONICS JOURNAL（2024）

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A 6.5-to-6.9-ghz SSPLL with Configurable Differential Dual-Edge SSPD Achieving 44-Fs RMS Jitter, -260.7-db FOMJitter, and -76.5-dbc Reference Spur

Tianle Chen, Hongyu Ren,Zunsong Yang,Yunbo Huang, Xianghe Meng,Weiwei Yan, Weidong Zhang,Xuqiang Zheng,Xuan Guo,Tetsuya Iizuka,Pui-In Mak, Yong Chen,Bo Li

Symposium on VLSI Technologypp.1-2, (2024)

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A Type-II Reference-Sampling PLL with Non-Uniform Octuple-Sampling Phase Detector Achieving 55-Fs JitterRMS, –91.9-Dbc Reference Spur and –259-Db Jitter-Power FOM

Hongyu Ren,Yunbo Huang,Zunsong Yang, Tianle Chen, Xianghe Meng,Weiwei Yan, Weidong Zhang, Zhongmao Liu,Tetsuya Iizuka,Pui-In Mak,Yong Chen, Bo Liu

2024 50TH IEEE EUROPEAN SOLID-STATE ELECTRONICS RESEARCH CONFERENCE, ESSERC 2024pp.113-116, (2024)

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A Wide Input Range, External Capacitor-Less LDO with Fast Transient Response

Mali Gao,Xiaowu Cai,Weiwei Yan,Haitao Zhao, Ruirui Xia,Yuexin Gao

IEICE Electronics Expressno. 7 (2023): 20230008-20230008

Cited3Views0EIBibtex

High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model

Lida Xu,Linchun Gao,Tao Ni,Juanjuan Wang, Zewen Cao,Yifan Li,Xueqin Li,Runjian Wang,Xiaojing Li,Weiwei Yan,Jianhui Bu,Duoli Li,Chuanbin Zeng,Bo Li,Jiajun Luo

IEEE Transactions on Electron Devicesno. 9 (2023): 4786-4792

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Study on Occupational Exposure of Medical Staff Caused by Induced Radioactivity in the Treatment Room of Medical Heavy-Ion Facility

Changli Luo,Wuyuan Li, Bo Yang,Youwu Su,Yang Li, Shakhboz Khasanova,Wang Mao,Xuebo Liu,Weiwei Yan,Zongqiang Li

NUCLEAR TECHNOLOGY & RADIATION PROTECTION（2023）

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Study on Low Rate of Change Characteristics of Saturation Output Current of 28 Nm UTBB FDSOI at 300 °C High-Temperature

L. D. Xu, L. C. Gao,T. Ni,J. J. Wang, S. S. Zhao, H. Y. Zhang, Y. F. Li, R. J. Wang,X. J. Li,W. W. Yan,D. L. Li,J. H. Bu,C. B. Zeng,B. Li,Z. J. Wang,F. Z. Zhao,J. J. Luo,Z. S. Han

JOURNAL OF PHYSICS D-APPLIED PHYSICS（2023）

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10 MeV同轴腔电子加速器辐射屏蔽设计

Li Yang,Li Wuyuan,Zhao Quantang,Liu Xuebo,Li Zhongping, Yang Bo,Yan Weiwei, Mao Wang,Luo Changli,Su Youwu

wf（2023）

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