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Yan Cui was born in Heilongjiang, China, in September 1975. She received the B.S. and M.S. degrees in electronics and computer engineering from Jilin University, Changchun, China, in 1995 and 1998, respectively. She is currently pursuing the Ph.D. degree in electrical and computer engineering at Auburn University, Auburn, AL.
She is currently with the Auburn University, Auburn, AL. Her research activities include modeling and simulation of RF noise in SiGe HBTs and RF CMOS, and Ge profile optimization for SiGe HBT performance improvements.
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论文共 17 篇作者统计合作学者相似作者
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Zhiming Feng,Shuomao Chen,Chenggang Xie,Yan Cui, M Brunsman, C P Chao, H C Tseng,Guofu Niu, G A Rezvani
bipolar/bicmos circuits and technology meetingpp.25-28, (2008)
PROCEEDINGS OF THE 2006 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETINGpp.170-+, (2006)
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