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Xu-Yi Zhao was born in Ezhou, China in 1994. He received the M.S. degree in condensed physics from Shanghai University, Shanghai, China, in 2018. During his master period, he was a Joint Master Student with the Shanghai Institute of Microsystem and Information Technology. Since 2018, he has been a Research Intern with the Shanghai Institute of Microsystem and Information Technology. His main research interests are design and molecular beam epitaxy growth of semiconductor-based devices for applications in optical communication.
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Journal of Crystal Growth (2022): 126888-126888
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Journal of Crystal Growth (2022): 126888
PHYSICA SCRIPTAno. 12 (2022)
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