wenjer tsai

Wen-Jer Tsai was born in Hualien, Taiwan, R.O.C. on April 23, 1969. He received the B.S., M.S., and Ph.D. degrees in electronics engineering from National Chiao-Tung University, Hsinchu, Taiwan, R.O.C. in 1991, 1993, and 2005, respectively. His Ph.D. research was regarding the reliability issues in a trapping nitride-based nonvolatile memory cell. During 1991 to 1993, he worked on the modeling and simulation of field emission devices and developed a three-dimensional vacuum microelectronic field emission device simulator. After two years of military service, he joined Macronix International Company, Ltd., Hsinchu, in 1995 as a Device Engineer. From 1995 to 2000, he has been engaged in simulation, modeling, and design of nonvolatile memory devices. Since 2000, he has been working on the development of nitride-storage Flash memory technology, including the novel device concepts, reliability physics, test chip design, and scaling feasibility.His current research focuses on the device characterization and reliability physics of nonvolatile memory devices.