Weizong Xu

Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materialsand School of Electronic Science and Engineering Nanjing University

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基本信息

Career Trajectory

Bio

Weizong Xu received the Ph.D. degree from Nanjing University, Nanjing, China, in 2017. He is currently with the School of Electronic Science and Engineering, Nanjing University. His current research interests include the design and analysis of GaN-based power devices, amorphous oxides-based field effect transistors, and electromagnetic wave metamaterials.

Research Interests

Papers共 102 篇Author StatisticsCo-AuthorSimilar Experts

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期刊级别

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Suppression of Dynamic Resistance Degradation in 1200-V GaN-on-Sapphire E-Mode GaN HEMTs by Drain-Side Thin P-Gan Design

Wenfeng Wang,Feng Zhou, Junfan Qian,Can Zou,Weizong Xu,Fangfang Ren,Dong Zhou,Dunjun Chen, Yuanyang Xia,Leke Wu, Yiheng Li,Tinggang Zhu,Youdou Zheng,Rong Zhang,Hai Lu

IEEE Transactions on Electron Devicesno. 99 (2025): 1-4

Cited0Views0EIWOSBibtex

X-Ray Irradiation-Induced VTH Instability in Schottky-Gate P-Gan HEMTs

Yu Rong,Feng Zhou, Wenfeng Wang, Can Zou, Junfan Qian,Weizong Xu,Fangfang Ren,Dong Zhou,Dunjun Chen,Youdou Zheng,Rong Zhang,Hai Lu

IEEE Transactions on Electron Devicesno. 99 (2025): 1-6

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Highly Robust P-Gan Gate HEMT with Surge-Energy Ruggedness under Unclamped Inductive Switching and UV Pulse Laser Irradiation

Feng Zhou,Tianyang Zhou,Can Zou, Rong Yu, Junfan Qian,Weizong Xu,Fangfang Ren,Dong Zhou,Dunjun Chen,Youdou Zheng,Rong Zhang,Hai Lu

IEEE ELECTRON DEVICE LETTERSno. 1 (2025): 36-39

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4H-Sic-based Low-Noise Front-End Charge Coupling Transistor for 0.9% Radiation Energy Resolution

Jiuzhou Zhao,Weizong Xu, Hao Qu,Dong Zhou,Danfeng Pan, Xiaoyu Tang,Fangfang Ren,Feng Zhou,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu

IEEE Transactions on Electron Devicesno. 99 (2025): 1-5

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Normally-Off Schottky-Gate P-Gan HEMTs with Enhanced Irradiation Hardness

Tianyang Zhou,Feng Zhou,Quanyou Chen,Xiaofeng Lyu,Weizong Xu,Dong Zhou,Fangfang Ren,Dunjun Chen,Yuanyang Xia,Leke Wu,Ke Wang,Yiheng Li,Tinggang Zhu,Rong Zhang,Youdou Zheng,Hai Lu

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024pp.526-529, (2024)

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Insights into Dynamic Switching Behavior and Electric Field Distribution of Depletion-Mode GaN HEMT with Bonding Pad over Active Layout

Lijian Guo,Feng Zhou,Weizong Xu,Fangfang Ren,Dong Zhou,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu

SEMICONDUCTOR SCIENCE AND TECHNOLOGY（2024）

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Self-powered MXene/GaN Van Der Waals Schottky Ultraviolet Photodetectors with Exceptional Responsivity and Stability

Yu Ding,Xiangming Xu,Zhe Zhuang,Yimeng Sang,Mei Cui,Wenxin Li,Yu Yan, Tao,Weizong Xu,Fangfang Ren,Jiandong Ye,Dunjun Chen,Hai Lu,Rong Zhang,Husam N. Alshareef,Bin Liu

APPLIED PHYSICS REVIEWS（2024）

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Real-Time Terahertz Modulation Using Gold-MoS2 Metasurface with Electromagnetically Induced Transparency-Like Resonance

Jianhong Zhang,Zesen Liu,Jiandong Ye,Weizong Xu,Feng Zhou,Dong Zhou,Rong Zhang,Fangfang Ren,Hai Lu

IEEE PHOTONICS JOURNAL（2024）

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Study of Gain Spatial Nonuniformity in N-on-p and P-on-n 4H-Sic Avalanche Photodiodes

Tianyi Li,Yan Zhou,Xiaoqiang Tao,Weizong Xu,Dong Zhou,Fangfang Ren,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu

IEEE Photonics Technology Letters（2024）

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High-performance 4H-Sic EUV Photodiode with Lateral P-N Junction Fabricated by Selective-area Ion Implantation

Yifu Wang,Zhiyuan Wang,Weizong Xu,Feng Zhou,Dong Zhou,Fangfang Ren,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu

IEEE Electron Device Lettersno. 5 (2024): 857-860

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Author Statistics

#Papers: 102

#Citation: 1186

H-Index: 17

G-Index: 31

Sociability: 5

Diversity: 3

Activity: 35

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