V. Yu. Chalkov - Research Institute for Physics and Technology, Lobachevskii University of Nizhnii Novgorod

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Ge/Si(001) Heteroepitaxial Layers Doped in the HW CVD Process by Impurity Evaporation from a Sublimating Ge Source

A. M. Titova,V. G. Shengurov,S. A. Denisov,V. Yu. Chalkov,A. V. Zaitsev,N. A. Alyabina,A. V. Kudrin,A. V. Zdoroveishev

Semiconductorsno. 4 (2024): 358-363

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Development of a Ge-MISFET Instrument Structure with an Induced P-Type Channel

N. A. Alyabina, E. A. Arkhipova,Yu. N. Buzynin,S. A. Denisov,A. V. Zdoroveishchev,A. M. Titova,V. Yu. Chalkov,V. G. Shengurov

Russian Microelectronicsno. 3 (2024): 197-201

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THE EFFECTIVENESS OF THE AlGaAs/GaAs/AlGaAs BUFFER LAYER SYSTEM IN REDUCING DEFECT DENSITY AND SUPPRESSING MUTUAL DIFFUSION DURING THE INTEGRATION OF GaAs WITH Ge/Si(001) USING EPITAXIAL METHODS

A.A. Sushkov, A.V. Rykov, N.V. Baidus, V.G. Shengurov, S.A. Denisov,V.Yu. Chalkov,D.V. Yurasov, D.A. Pavlov

Materials of the 27th All-Russian Youth Scientific Conferencepp.273-275, (2024)

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Epitaxial N+-Ge/p+-si(001) Heterostructures with Ultra Sharp Doping Profiles for Light Emitting Diode Applications

A. M. Titova,V. G. Shengurov,D. O. Filatov,S. A. Denisov,V. Yu. Chalkov,M. V. Ved',A. V. Zaitzev,A. A. Sushkov,N. A. Alyabina

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS（2023）

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ELECTRICAL PARAMETERS OF Ge AND GeSn HETEROEPITAXIAL LAYERS GROWN ON Si(001) BY GS MBE METHOD

A.M. Titova, V.G. Shengurov, S.A. Denisov,V.Yu. Chalkov, A.V. Kudrin,A.V. Zdoroveishchev,N.Yu. Buzynin

Materials of the 26th All-Russian Youth Scientific Conference (2023)

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Epitaxial N+-Ge/p+-si(0 0 1) Heterostructures with Ultra Sharp Doping Profiles for Light Emitting Diode Applications

A.M. Titova,V.G. Shengurov,D.O. Filatov,S.A. Denisov,V.Yu. Chalkov,M.V. Ved',A.V. Zaitzev,A.A. Sushkov,N.A. Alyabina

Materials Science and Engineering B (2023): 116219

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Distribution of Charge Carrier Concentrations in Epitaxial Ge and GeSn Layers Grown on N-=Sup=-+-=/sup=--si(001) Substrates

Titova A. M., ,Chalkov V. Yu.,Alyabina N. A.,Zdoroveishchev A. V.,Shengurov V. G.

Semiconductorsno. 9 (2022)

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Investigation of the Effect of Optical Radiation on Resistive Switching of MIS-structures Based on ZrO-=SUB=-2-=/SUB=-(Y) on Si(001) Substrates with Ge Nanoislands

Koryazhkina M. N.,Filatov D. O.,Shenina M. E.,Antonov I. N.,Kruglov A.V.,Ershov A. V.,Gorshkov A. P.,Denisov S. A.,Chalkov V. Yu.,Shengurov V. G.

Semiconductorsno. 8 (2022)

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Growth Defects in GeSn/Ge/Si(001) Epitaxial Layers Grown by Hot Wire Chemical Vapor Deposition of Ge with Co-Evaporation of Sn

V. G. Shengurov,V. Yu Chalkov,S. A. Denisov,V. N. Trushin, A. Zaitsev, A. Nezhdanov,D. A. Pavlov,D. O. Filatov

JOURNAL OF CRYSTAL GROWTH (2022)

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Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs

Sushkov A. A.,Pavlov D. A.,Andrianov A. I.,Shengurov V. G.,Denisov S. A.,Chalkov V. Yu.,Kriukov R. N.,Baidus N. V.,Yurasov D. V.,Rykov A. V.

Semiconductors（2022）

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