Ty Mcnutt

Ty R. McNutt (M’01) received the Ph.D. degree in silicon carbide (SiC) semiconductor device physics from the University of Arkansas, Fayetteville, AR, USA. He was with the Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD, USA, performing characterization and modeling of SiC power devices. In 2004, he joined Northrop Grumman, Falls Church, VA, USA, where he concentrated on the development of SiC power devices for defense systems, and where he served as a Program Manager with the Advanced Concepts and Technologies Division from 2007 to 2010. He is currently the Director of Business Development, Arkansas Power Electronics International, Inc., Fayetteville. He has co-authored more than 60 publications in various refereed journals and conference proceedings on SiC devices and applications.