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Thomas H. Lee (Fellow, IEEE) received the S.B., S.M., and Sc.D. degrees in electrical engineering from the Massachusetts Institute of Technology, Cambridge, MA, USA, in 1983, 1985, and 1990, respectively.
He joined Analog Devices in 1990, where he was primarily engaged in the design of high-speed clock recovery devices. In 1992, he joined Rambus Inc., Mountain View, CA, USA, where he developed high-speed analog circuitry for 500 megabyte/s CMOS DRAMs. Since 1994, he has been a Professor of Electrical Engineering with Stanford University, Stanford, CA, USA, where his research focus has been on gigahertz-speed wireline and wireless integrated circuits built in conventional silicon technologies, particularly CMOS. He holds 65 U.S. patents and authored The Design of CMOS Radio-Frequency Integrated Circuits (currently, in its second edition) and Planar Microwave Engineering with Cambridge University Press. He is a coauthor of four additional books on RF circuit design, a Co-Founder of Matrix Semiconductor (acquired by Sandisk) and Ayla Networks, and the Founder of ZeroG Wireless (acquired by Microchip). He has also contributed to the development of PLLs in the StrongARM, Alpha, and AMD K6/K7/K8 microprocessors.
Dr. Lee has twice received the “Best Paper” Award at the International Solid-State Circuits Conference, coauthored a “Best Student Paper” at ISSCC, was awarded the Best Paper Prize at CICC, and is a Packard Foundation Fellowship recipient. In 2012, he was awarded the U.S. Secretary of Defense Medal for Exceptional Civilian Service, as well as an Honoris Causa Doctorate from the University of Waterloo. He served on Xilinx’s Board of Directors from 2016 to its acquisition by AMD, was the 2011 Ho-Am Prize Laureate, and was awarded the IEEE Gustav Kirchhoff Award in 2021. He served for a decade as an IEEE Distinguished Lecturer of the Solid-State Circuits Society, and has been a DL of the IEEE Microwave Society as well. He is the past Director of DARPA’s Microsystems Technology Office.
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IEEE Trans. Circuits Syst. I Regul. Pap.no. 8 (2023): 3359-3372
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