Tao Chen - Dept Elect & Comp Engn, Hong Kong Univ Sci & Technol

基本信息

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个人简介

Tao Chen received the B.S. degree in microelectronics science and engineering from the University of Electronic Science and Technology of China, Chengdu, China, in 2019. He is currently working toward the Ph.D. degree in electronic and computer engineering with The Hong Kong University of Science and Technology, Hong Kong.

研究兴趣

论文共 44 篇作者统计合作学者相似作者

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P-Gan Gate Power HEMT Heterostructure As a Versatile Platform for Extremely Wide-Temperature-range (X-WTR) Applications

Yat Hon Ng,Zheyang Zheng,Li Zhang,Ruizi Liu,Tao Chen,Sirui Feng,Qiming Shao,Kevin J. Chen

APPLIED PHYSICS LETTERSno. 4 (2024)

引用6浏览0引用

A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Transistor

Yingchen Yang,Sirui Feng, Zongjie Zhou,Tao Chen, Zheng Wu, Yangming Du,Yat Hon Ng,Hang Liao,Yumeng Huang, Heng Wang,Zheyang Zheng,Kevin J. Chen

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024pp.343-346, (2024)

引用2浏览0EIWOS引用

3D Co-packaging of GaN/SiC Cascode Device for High-Frequency Power Switching Operation

Ji Shu,Jiahui Sun,Mian Tao, Yangming Du,Tao Chen,Shi-Wei Ricky Lee,Kevin J. Chen

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024pp.486-489, (2024)

引用0浏览0EIWOS引用

A Graphene Ridge Nanowire Hybrid Surface Plasma Waveguide with Longer Transmission Length

Jiaqi Liu, Lu Yuan,Tao Chen,Li Zhang

Advanced Fiber Laser Conference (AFL2023) (2024)

引用0浏览0引用

Vertical Leakage and Back-Gating Characteristics of GaN HEMTs Based on GaN/AlN Epitaxy on Off-Axis Conducting 4H-Sic

Zheyang Zheng,Hang Liao,Sirui Feng, Yingchen Yang, Yutao Geng,Tao Chen,Junting Chen,Mengyuan Hua,Kevin J. Chen

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024pp.291-294, (2024)

引用0浏览0EIWOS引用

GaN Power Integration Technology and Its Future Prospects

Jin Wei,Zheyang Zheng,Gaofei Tang,Han Xu,Gang Lyu,Li Zhang,Junting Chen,Mengyuan Hua,Sirui Feng,Tao Chen,Kevin J. Chen

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 3 (2024): 1365-1382

引用28浏览0EIWOS引用

GaN-based Charge Trapping Memory with an AlN Interfacial Layer for Multi-State Operation

Tao Chen,Zheyang Zheng,Sirui Feng,Li Zhang,Yat Hon Ng,Kevin J. Chen

IEEE ELECTRON DEVICE LETTERSno. 7 (2024): 1133-1136

引用0浏览0EIWOS引用

Impact of Inadequate Mg Activation on Dynamic Threshold Voltage of Schottky-type $P$-Gan Gate HEMTs

Jiahui Sun,Zheyang Zheng,Li Zhang,Yat Hon Ng,Ji Shu,Tao Chen,Kevin J. Chen

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.24-27, (2023)

引用3浏览0EIWOS引用

Switching Performance of GaN $P$-Fet-bridge (PFB-) HEMTs Studied with Mixed-mode TCAD Simulation

Junting Chen,Tao Chen,Zuoheng Jiang,Chengcai Wang,Zheyang Zheng,Jin Wei,Kevin J. Chen,Mengyuan Hua

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.107-110, (2023)

引用2浏览0EIWOS引用

Conductivity Enhancement Induced by Confined Vicinal Hole Storage in Enhancement-mode $P$-Gan Gate Double-Channel HEMTs

Hang Liao,Zheyang Zheng,Tao Chen,Li Zhang,Yan Cheng, Long Chen,Li Yuan,Kevin J. Chen

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.231-234, (2023)

引用1浏览0EIWOS引用

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