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Takashi Ohsawa (M'09) received the B.S. and M.S. degrees in physics from Waseda University, Tokyo, Japan, in 1977 and 1979, respectively and the Ph.D. degree in electronic engineering from University of Tsukuba, Tsukuba, Japan, in 2009.
In 1982, he joined the Semiconductor Device Engineering Laboratory, Toshiba Corp., Kawasaki, Japan, where he was engaged in the development of 1 Mb, 4 Mb and 64 Mb DRAMs, and subsequently managed the DRAM product design group. From 1997 through 2000, he worked for the DRAM Development Alliance involving IBM, Siemens and Toshiba as a manager of the 256 Mbit DRAM Product Design Department in Essex Junction, Vermont, USA. From 2000 to 2010, he was working on novel memory technologies including the floating body cell in the Novel Memory Design Department, Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation, Yokohama, Japan. He is currently a Professor in Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan.
Dr. Ohsawa received the Takuo Sugano Award for outstanding Far-East paper of ISSCC in 2003.
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Shuchao Gao,Takashi Ohsawa
JAPANESE JOURNAL OF APPLIED PHYSICSno. 2 (2024)
Shuchao Gao,Takashi Ohsawa
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)
IEEE Transactions on Nanotechnology (2023): 659-665
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JAPANESE JOURNAL OF APPLIED PHYSICSno. 4 (2023)
Shogo Hashimoto, Atsufumi Oshima,Takashi Ohsawa,Akira Ueno, Hiroaki Omae, Ryota Takase,Soya Kaneko,Hirotaka Chikuda
SSRN Electronic Journal (2022)
2022 IEEE 22nd International Conference on Nanotechnology (NANO)pp.287-290, (2022)
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