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Tahir Ghani is an Intel Fellow and Director, Transistor Technology and Integration at Intel Corporation. Since joining Intel in 1994, Tahir has played a key role in developing high performance transistor technology for various logic technology nodes. He has led the teams responsible for developing some of the most significant changes in semiconductor industry and implementing them into mainstream CMOS manufacturing. Tahir co-led the team responsible for developing industry-first HiK Metal Gate CMOS technology for Intel's 45nm CMOS node. He also led the team responsible for developing industry-first uniaxially strained Silicon CMOS technology for 90nm CMOS node. He is currently leading transistor technology development for 22nm CMOS logic node. Tahir received his PhD in Electrical Engineering from Stanford University. He has received Intel's highest technical award (Intel Achievement Award) twice for his work on transistor development.
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论文共 105 篇作者统计合作学者相似作者
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Natureno. 7974 (2023): 501-515
J.G. Alzate, P. Hentges,R. Jahan,A. Littlejohn, M. Mainuddin,D. Ouellette, J. Pellegren,T. Pramanik, C. Puls,P. Quintero,T. Rahman,U. Arslan,
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O. Golonzka,U. Arslan,P. Bai,M. Bohr,O. Baykan,Y. Chang, A. Chaudhari,A. Chen,N. Das, C. English,P. Jain,H. Kothari,
mag(2015)
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