Hyung-Gon Kim - Samsung Electronics Co. LtD

基本信息

Career Trajectory

Bio

Hyunggon Kim received the B.S. and M.S. degrees in electrical engineering from Hanyang University, Seoul, South Korea, in 1997 and 1999, respectively. He was with Hanyang University, where he was involved in the fault tolerance system. In 1999, he joined Samsung Electronics Company Ltd., Hwaseong, South Korea, where he has been involved in the design of NAND flash memories. His current research interests include digital circuit design and verification for NAND flash.

Research Interests

Papers共 96 篇Author StatisticsCo-AuthorSimilar Experts

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13.3 A 280-Layer 1tb 4b/cell 3D-NAND Flash Memory with a 28.5gb/mm2 Areal Density and a 3.2gb/s High-Speed IO Rate

Wontaeck Jung,Hyunggon Kim,Do-Bin Kim,Tae-Hyun Kim,Nam-Hee Lee,Dongjin Shin,Minyoung Kim,Youngsik Rho, Hun-Jong Lee, Yujin Hyun,Jaeyoung Park, Taekyung Kim,Hwiwon Kim,Gyeongwon Lee,Jisang Lee,Joonsuc Jang,Jungmin Park,Sion Kim,Su Chang Jeon,Suyong Kim,Jung-Ho Song,Min-Seok Kim,Taesung Lee,Byung-Kwan Chun,Tongsung Kim,Young Gyu Lee,Hokil Lee,Soowoong Lee,Hwaseok Lee,Dooho Cho,Sangwan Nam, Yeomyung Kim,Kunyong Yoon,Yoonjae Lee, Sunghoon Kim, Jungseok Hwang,Raehyun Song, Hyunsik Jang,Jae-Ick Son,Hongsoo Jeon,Myunghun Lee, Mookyung Lee,Kisung Kim,Eungsuk Lee,Myeong-Woo Lee,Sungkyu Jo,Chan Ho Kim,Jong Chul Park,Kyunghwa Yun,Soonock Seol,Ji-Ho Cho,Seungjae Lee,Jin-Yub Lee,SungHoi Hur

IEEE International Solid-State Circuits Conferencepp.236-237, (2024)

Cited0Views0EIWOSBibtex

Issues and Key Technologies for Next Generation 3D NAND

Chi-Weon Yoon,Hyung-Gon Kim,Seon-Kyoo Lee,Jinyub Lee,Jai Hyuk Song

2021 International Conference on Electronics, Information, and Communication (ICEIC)（2021）

Cited4Views0EIWOSBibtex

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate

2020 IEEE International Solid-State Circuits Conference - (ISSCC)pp.218-220, (2020)

Cited3Views0EIWOSBibtex

11.4 512Gb3b/セルLXIV積層WL3D V NANDフラッシュメモリ【Powered by NICT】

Kim Chulbum,Cho Ji-Ho,Jeong Woopyo,Il-Han Park,Hyunwook Park,Doo-Hyun Kim,Kang Daewoon, Sung-Hoon Lee,Lee Ji-Sang, Kim Won-Tae,Jiyoon Park,Ahn Yang-lo,Ji‐Young Lee,Lee Jong-hoon,Seungbum Kim,Yoon Hyun-Jun,Yu Jaedoeg, Nag Jin Choi,Kwon Yelim, Nahyun Kim,Jang Hwajun,Jonghoon Park,Song Seunghwan, Park Yong-Ha,Bang Jinbae,Hong Sangki,Byunghoon Jeong, Hyun-Jin Kim,Lee Chunan,Min Young-Sun,Lee Inryul,Kim In-Mo, Kim Sung-Hoon,Yoon Dongkyu,Kisung Kim,Choi Youngdon,Kim Moosung,Kim Hyunggon,Kwak Pansuk,Jeong-Don Ihm,Byeon Dae-Seok,Lee Jin-yub,Kitae Park,Kyung Kye-hyun

IEEE Conference Proceedings (2017): 203

Cited0Views0Bibtex

A 512gb 3b/Cell 64-Stacked Wl 3d V-Nand Flash Memory

2017 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)pp.202-202, (2017)

Cited7Views0Bibtex

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