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Research Interests

Papers共 787 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选
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期刊级别
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The Planar Core–Shell Junctionless MOSFET
Cunhua Dou, Weijia Song, Yu Yan, Xuan Zhang, Zhiyu Tang,Xing Zhao,Fanyu Liu, Shujian Xue,Huabin Sun,Jing Wan,Binhong Li, Yun Wang,Tianchun Ye,Yong Xu, Sorin Cristoloveanu
Micromachinesno. 4 (2025)
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Temperature Dependency of Non-Equilibrium Body Potential in SOI SBFETs
Tiexin Zhang,Fanyu Liu,Lei Shu, Siyuan Chen,Jiangjiang Li, Yuchong Wang, Yuchen Wu,Jing Wan,Yong Xu,Bo Li, Zhongying Xue,Zhengsheng Han,Tianchun Ye
IEEE Transactions on Electron Devicesno. 99 (2025): 1-8
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NV-APP: Invalid Programming Performance Improved No-Verify and Adaptive Pulse Programming Scheme for 3D QLC NAND Flash
Qianqi Zhao,Jing He,Tong Qu, Wentian Wu,Qianhui Li,Qi Wang,Zongliang Huo,Tianchun Ye
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systemsno. 99 (2025): 1-1
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A Planar Core-Shell Junctionless Transistor Compatible with FD-SOI Technology
Yu Yan, Weijia Song, Cunhua Dou,Xing Zhao, Shujian Xue,Yong Xu, Binhong Li, Yun Wang,Tianchun Ye, Sorin Cristoloveanu
Solid-State Electronicspp.109079, (2025)
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A One-Transistor DRAM Memory Cell Using HfO2-Based Ferroelectric-Assisted Charge Trapping Concept
Mingkai Bai, Xiaoqing Sun, Runhao Han, Yajing Ding, Tao Hu, Yuanyuan Zhao, Saifei Dai,Kai Han, Junshuai Chai,Hao Xu,Xiaolei Wang,Wenwu Wang,Tianchun Ye
IEEE Transactions on Electron Devicesno. 99 (2025): 1-8
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An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-level Interface Trap
Tiexin Zhang,Fanyu Liu,Lei Shu, Siyuan Chen, Yuchong Wang, Yuchen Wu,Jing Wan,Yong Xu, Shi Li, Yuyang Ding,Bo Li,Zhengsheng Han,Tianchun Ye
ieee（2025）
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Impact of Gate Length on the Electrical Characteristics of Junctionless FDSOI Strained SiGe Channel P-Finfet
Hongxiao Lin, Yuanhao Miao, Yuhui Ren,Yongkui Zhang,Qingzhu Zhang, Wenjuan Xiong, Jiahan Yu, Xuewei Zhao,Renrong Liang,Jun Xu,Tianchun Ye,Henry H. Radamson
Journal of Materials Science Materials in Electronicsno. 15 (2025): 1-15
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Impact of Saturated Spontaneous Polarization on the Memory Window and Endurance of Hafnium-Based Si Channel FeFET
Yajing Ding, Saifei Dai, Xiaoqing Sun, Xianzhou Shao,Min Liao, Fengbin Tian, Xinpei Jia, Hongyang Fan, Yuanyuan Zhao, Tao Hu, Mingkai Bai, Xiaoyu Ke, Junshuai Chai,Jinjuan Xiang,Kai Han,Hao Xu,Xiaolei Wang,Wenwu Wang,Tianchun Ye
IEEE Transactions on Electron Devicesno. 99 (2025): 1-8
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Comparative Cryogenic Investigation of FD-SOI Devices with Doped Epitaxial and Metallic Source/Drain
Xueyin Su, Binbin Xu,Bo Tang,Jing Xu,Jinbiao Liu,Yan Cui,Meiyin Yang, Bohan Chen, Keyou Tong, Guanyuan Zhao,Binhong Li,Xiaolei Wang,Tianchun Ye,Jun Luo
ECS Journal of Solid State Science and Technologyno. 6 (2024): 065001-065001
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Author Statistics

#Papers: 788

#Citation: 6714

H-Index: 31

G-Index: 49

Sociability: 7

Diversity: 4

Activity: 57

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