T. C. Chen - Taiwan Semiconductor Manufacturing Company

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论文共 23 篇作者统计合作学者相似作者

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Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) with Four Bits Per SOT Programming Line

William Hwang,Fen Xue,Ming-Yuan Song,Chen-Feng Hsu,T. C. Chen,Wilman Tsai,Xinyu Bao,Shan X. Wang

IEEE ELECTRON DEVICE LETTERSno. 10 (2024): 1800-1803

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Identical Pulse with Opposite Polarity Assistance Detrapping—Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse

Z. -F. Lou, C. -Y. Liao,K. -Y. Hsiang, Z. -H. Li, S. -H. Chang,T. -C. Chen, M. H. Lee

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

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How Fault-Tolerant Quantum Computing Benefits from Cryo-CMOS Technology

H.-L. Chiang, R. A. Hadi, J.-F. Wang, H.-C. Han,J.-J. Wu, H.-H. Hsieh,J.-J. Horng,W.-S. Chou, B.-S. Lien, C.-H. Chang, Y.-C. Chen,Yeong-Her Wang,T.-C. Chen, J.-C. Liu, Y.-C. Liu,Meng-Hsueh Chiang,K.-H. Kao, B. Pulicherla,J. Cai,C.-S. Chang,K.-W. Su, K.-L. Cheng, T.-J. Yeh,Y.-C. Peng,C. Enz,Mau-Chung Frank Chang,M.-F. Chang,H.-S. Philip Wong,Iuliana P. Radu

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (2023)

引用5浏览0EIWOS引用

Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: from Atom to Array

H.-L. Chiang, J.-F. Wang, K.-H. Lin,C.-H. Nien,J.-J. Wu,K.-Y. Hsiang,C.-P. Chuu, Y.-W. Chen, X. W. Zhang,C. W. Liu,Tahui Wang,C. C. Wang,M.-H. Lee, M.-F. Chang,C.-S. Chang,T. C. Chen

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2022）

引用3浏览0EIWOS引用

Correlation between Access Polarization and High Endurance (~ 10 12 cycling) of Ferroelectric and Anti-Ferroelectric HfZrO 2

K.-Y. Hsiang,C.-Y. Liao,Y.-Y. Lin,Z.-F. Lou,C.-Y. Lin,J.-Y. Lee,F.-S. Chang,Z.-X. Li,H.-C. Tseng,C.-C. Wang,W.-C. Ray,T.-H. Hou,T.-C. Chen,C.-S. Chang,M. H. Lee

2022 IEEE International Reliability Physics Symposium (IRPS)pp.P9-1-P9-4, (2022)

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Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density Envm

C.-Y. Liao,K.-Y. Hsiang,Z. -F. Lou,H.-C. Tseng,C.-Y. Lin,Z.-X. Li,F.-C. Hsieh,C.-C. Wang,F.-S. Chang,W.-C. Ray,Y.-Y. Tseng,S. T. Chang,T.-C. Chen,M. H. Lee

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (2022)

引用4浏览0EIWOS引用

Correlation Between Access Polarization and High Endurance ( 1012 Cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2

K-Y. Hsiang,C-Y. Liao,Y-Y. Lin,Z-F. Lou,C-Y. Lin,J-Y. Lee,F-S. Chang,Z-X. Li,H-C. Tseng,C-C. Wang,W-C. Ray,M. H. Lee,T-H. Hou,T-C. Chen,C-S. Chang

2022 IEEE International Reliability Physics Symposium (IRPS)（2022）

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Energy Efficient Computing with High-Density, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM)

William Hwang,Fen Xue,Fan Zhang,Ming-Yuan Song,Chien-Min Lee,Emrah Turgut,T. C. Chen,Xinyu Bao,Wilman Tsai,Deliang Fan,Shan X. Wang

IEEE Transactions on Magnetics（2022）

引用7浏览0EIWOS引用

Endurance > 10 11 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

C.-Y. Liao,K.-Y. Hsiang,Z.-F. Lou,H.-C. Tseng, C.-Y. Lin,Z.-X. Li,F.-C. Hsieh,C. C. Wang,F.-S. Chang,W.-C. Ray,Y.-Y. Tseng,Shu-Tong Chang,T. C. Chen,M. H. Lee

Symposium on VLSI Technology (VLSI Technology)pp.1-2, (2022)

引用5浏览0EI引用

Low-voltage (~1.3V), Arsenic Free Threshold Type Selector with Ultra High Endurance (> 10¹¹) for High Density 1S1R Memory Array

C. H. Wu,C. M. Lee,Y. S. Chen,H. Y. Lee,E. Ambrosi, C. F. Hsu,S. Vaziri,Y. Y. Chen,C. H. Nien, R. L. Hwang,P. J. Liao,D. H. Hou,Y.-H. Lee,T. Y. Lee,T. C. Chen,M. F. Chang,H.-S. P. Wong,X. Y. Bao

2021 Symposium on VLSI Technologypp.1-2, (2021)

引用6浏览0EIWOS引用

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