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Sankaran, S.

IBM Syst. & Technol. Group, IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY|c|

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Extendibility Study of a PVD Cu Seed Process with Ar+ Rf-Plasma Enhanced Coverage for 45nm Interconnects

Andrew H Simon, T Bolom, T J Tang, Brett C Baker, Carsten Peters,Bryan N Rhoads,Philip L Flaitz,Sujatha Sankaran, Stephan Grunow

(2008)

Cited by1Bibtex

Line edge roughness and spacing effect on low-k TDDB characteristics

Feixiang Chen,J R Lloyd,Kaushik Chanda,Ravi Achanta,O Bravo,Alvin W Strong,Paul S Mclaughlin,M Shinosky,Sujatha Sankaran,Ephrem G Gebreselasie, Anthony K Stamper,Z X He

(2008)

Cited by30Bibtex

A 45 nm CMOS node Cu/Low-k/ Ultra Low-k PECVD SiCOH (k=2.4) BEOL Technology

S Sankaran,S Arai,R Augur,M Beck, G A Biery, T Bolom,Griselda Bonilla, O Bravo,Kaushik Chanda,Moo Sung Chae,F Chen, Lawrence A Clevenger

San Francisco, CA, pp.1-4E, (2006)

Cited by24EIWOSBibtex

High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography

Shreesh Narasimha, Kohei Onishi,Hasan M Nayfeh,Andrew M Waite,M Weybright, Jack D Johnson, Carlos Roberto Fonseca,D Corliss, C Robinson, M Crouse, Duxiao Yang,C H J Wu

(2006)

Cited by114Bibtex

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