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个人简介
Scholarships: University Honours Scholarship (University of Tasmania) 1978,
Australian Institute of Nuclear Science and Engineering Postgraduate Studentship (two given in Australia each year) 1979-82,
B.Sc. Physics (1977) University of Tasmania, Australia,2001-present Distinguished Professor, Department of Materials Science and Engineering, University of Florida(also Alumni Chair-2001-present)。
Some key papers:
Ion Implantation for Isolation of III-V Semiconductors, S.J.Pearton, Materials Science Reports 4,pp 313-367(1990).This showed that the processing of many compound semiconductor devices could be simplified by using ion implantation to create resistive regions between devices for electrical isolation, rather than etching away the material or using a backfill of oxide to achieve isolation. This process is now standard in most III-V transistor technologies because of its high yield and ability to maintain a planar surface .
Hydrogen in Crystalline Semiconductors, S.J.Pearton, J.W.Corbett and T.S.Shi,Appl.Phys.A 43 pp.153-195(1987).This paper laid the groundwork for an intense period of activity by researchers around the world on the properties of hydrogen in single-crystal Si,GaAs and GaN. There were many conferences devoted to this topic and this paper was a catalyst in setting out what was known and what needed to be addressed by theorists and experimentalists. Hydrogen has proven to be particularly important in semiconductors, where it passivates the electrical activity of both donor and acceptor dopants and diffuses rapidly into the material even at room temperature during processes such as solvent cleaning, acid etching, plasma etching and sputter deposition. This has become very important as Si microchip processing temperatures are reduced in order to minimize diffusion in ever-smaller transistors. The source of the hydrogen can be background water vapor in vacuum systems or even photoresist and thus the origin of the large changes in electrical properties it causes are often difficult to identify unless one is aware that hydrogen may be the cause. It was hydrogen passivation of Mg acceptors in GaN that prevented realization of p-type doping in this material for a long period. Shuji Nakamura has stated publicly numerous times that he understood what was happening after reading the authors work and then was able to use annealing to drive the hydrogen off the Mg atoms and obtain p-type GaN. The review article was eventually turned into a book of the same title, which has been cited 385 times in the literature(ISI Web of Science),making a total of over 1000 citations for the two versions.
GaN:Processing,Defects and Devices,S.J.Pearton,J.C.Zolper,R.J.Shul and F.Ren,J.Appl.Phys.86,pp1-78(1999).This paper discussed progress in developing processing methods and covered devices such as lasers ,light-emitting diodes and transistors along with the effects of processing-induced defects on the performance of these devices. It has become a standard reference in the field and is unique in that is uses a multi-disciplinary approach, covering the materials, electrical engineering, chemistry and chemical processing of GaN.
Whispering –Gallery Mode Microdisk Lasers, S.McCall, A.F.J.Levi, R.E.Slusher, S.J.Pearton and R.A.Logan,Appl.Phys.Lett. 60, pp.289-291(1992).This reported a new microlaser design with extremely low threshold current that was reported in the New York Times and Wall Street Journal. It showed the potential of using lasers as optical computing elements to increase the speed of voice and data transmission systems. The work was made possible by a combined multi-disciplinary effort involving crystal growth, laser design, high resolution low damage plasma etching and novel testing.
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JOURNAL OF APPLIED PHYSICSno. 10 (2024)
Journal of Applied Physicsno. 10 (2024)
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY Bno. 2 (2024): 023202-023202
Jian-Sian Li, Hsiao-Hsuan Wan,Chao-Ching Chiang,Timothy Jinsoo Yoo, Meng-Hsun Yu,Fan Ren,Honggyu Kim,Yu-Te Liao,Stephen J. Pearton
ECS Journal of Solid State Science and Technology (2024)
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYno. 1 (2024)
ADVANCED MATERIALS TECHNOLOGIESno. 5 (2024)
2023 Device Research Conference (DRC)pp.1-2, (2023)
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Alfons Schulte,Sushrut Modak, Yander Landa, Atman Atman,Jian-Sian Li,Chao-Ching Chiang,Fan Ren,Stephen J. Pearton,Leonid Chernyak
CONDENSED MATTERno. 4 (2023)
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