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个人简介
Stefano Leone was born in Catania, Italy, in 1978. He received the B.Sc. and M.Sc. degrees in industrial chemistry from the University of Catania, Catania, in 2000 and 2002, respectively, and the Ph.D. degree in semiconductor materials from the University of Linkoping, Linköping, Sweden, in 2010.
He has 17 years of experience in the epitaxial growth of wide bandgap semiconductors by having worked in different industries in Italy, USA, and Germany. Since 2017, he has been leading the Group of the Epitaxial Growth of Nitride Semiconductors, Fraunhofer Institute for Applied Solid State Physics (Fraunhofer IAF), Freiburg im Breisgau, Germany.
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论文共 106 篇作者统计合作学者相似作者
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Niklas Wolff, Georg Schoenweger,Isabel Streicher,Md Redwanul Islam, Nils Braun,Patrik Stranak,Lutz Kirste,Mario Prescher,Andriy Lotnyk,Hermann Kohlstedt,Stefano Leone,Lorenz Kienle,
arxiv(2023)
CRYSTAL GROWTH & DESIGNno. 2 (2023): 782-791
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERSno. 2 (2023)
Piero Mazzolini, Zsolt Fogarassy,Antonella Parisini,Francesco Mezzadri,David Diercks,Matteo Bosi,Luca Seravalli, Anna Sacchi,Giulia Spaggiari,Danilo Bersani,Oliver Bierwagen,Benjamin Moritz Janzen,
ADVANCED FUNCTIONAL MATERIALSno. 2 (2023)
ADVANCED FUNCTIONAL MATERIALSno. 2 (2023)
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