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He has made fundamental and pioneering contributions to semiconductor devices, especially the metal-semiconductor contacts, microwave devices, and MOSFET technology. Of particular importance is his discovery with Dr. D. Kahng of the floating-gate memory (FGM) effect which has subsequently given rise to a large family of memory devices including EPROM, EEPROM and Flash memory. FGM is a ground-breaking technology for long-term information storage (superseding HDD, optical disk and magnetic tape) and enables the invention of nearly all modern electronic systems such as the digital cellular phone, tablet computer, smart IC card, digital camera, digital television, portable DVD, MP3 music player, pacemaker, implantable defibrillator, global positioning system (GPS), and anti-lock braking system (ABS). FGM has also empowered technology for the advancement of the artificial intelligence, big data, cloud computing, internet of things, robotics and solid-state drive.
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论文共 218 篇作者统计合作学者相似作者
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Kuan-Ju Zhou,Ting-Chang Chang,Po-Yu Yen,Yu-An Chen,Ya-Ting Chien,Bo-Shen Huang, Po-Yi Lee, Tzu-Hsuan Juan,Simon M. Sze,Yang-Shun Fan,Chen-Shuo Huang,Chih-Hung Tsai
IEEE Electron Device Lettersno. 99 (2024): 1-1
IEEE Transactions on Electron Devicesno. 99 (2024): 1-6
IEEE Transactions on Electron Devicespp.1-6, (2023)
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SSRN Electronic Journalno. 8 (2023): 085004-085004
IEEE Transactions on Electron Devicesno. 5 (2023): 2216-2221
ACS APPLIED ELECTRONIC MATERIALSno. 2 (2023): 1183-1188
2023 35th International Conference on Microelectronic Test Structure (ICMTS)pp.1-4, (2023)
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