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个人简介
Shuman Mao was born in Jiangsu, China, in 1992. He received the B.S. degree in electronic information science and technology from the University of Electronic Science and Technology of China, Chengdu, China, in 2015, where he is currently pursuing the Ph.D. degree in electromagnetic field and microwave techniques.
His current research interests include characterization and modeling of GaN high electron mobility transistors devices and power amplifier monolithic microwave integrated circuit design.
研究兴趣
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IEEE Transactions on Electron Devicesno. 1 (2024): 940-943
IEEE TRANSACTIONS ON ELECTRON DEVICESno. 1 (2024): 940-943
Research Square (Research Square) (2023)
2023 Asia-Pacific Microwave Conference (APMC)pp.168-170, (2023)
IEEE Transactions on Electron Devicesno. 12 (2023): 6231-6236
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IEEE TRANSACTIONS ON ELECTRON DEVICESno. 99 (2023): 1-6
IEEE Transactions on Electron Devicesno. 4 (2023): 1835-1842
2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMCpp.168-170, (2023)
2022 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS, IMWS-AMPpp.1-3, (2022)
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Yujie Liu,Zhilong Xiao, Shiquan Zhu, Huanpeng Wanq,Shuman Mao,Qingzhi Wu,Ruimin Xu,Bo Yan,Yuehang Xu
2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)pp.94-95, (2022)
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