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个人简介
Shiying Xiong received the B.S. and M.S. degrees in applied physics from Tsinghua University, Beijing, China, in 1995 and 1998, respectively. From 2000, he joined the University of California, Berkeley, to study for the Ph.D. degree in solid state devices.
He did research on semiconductor quantum well structures and high-Tc superconducting materials at Tsinghua University. From 1998 to 2000, he was studying at the Physics Department of the University of California, Berkeley. His research at Berkeley was on optimizing the performance of advanced MOSFET transistors and investigating the impacts of process variations. His current research interests are electrical transport in ultrascaled devices and nanocontacts.
研究兴趣
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IEEE TRANSACTIONS ON ELECTRON DEVICESno. 11 (2003): 2255-2261
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