Sandip Bhattacharya - Department of Electronics and Communication Engineering, Techno International New Town

基本信息

Career Trajectory

Bio

Sandip Bhattacharya received the Ph.D. (Eng.) degree from the Indian Institute of Engineering Science and Technology (IIEST), India, in 2017. From October 2017 to December 2020, he worked as a Postdoctoral Researcher with the HiSIM Research Center, Hiroshima University, Japan. He is currently working as an Associate Professor with SR University, Warangal, India. His current research interests include nano device, interconnect modeling, and intelligent circuit design for robotics.

Research Interests

Papers共 104 篇Author StatisticsCo-AuthorSimilar Experts

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Comprehensive Evaluation of T-gated AlN/GaN/SiC MOSHEMTs with ZrO2/Al2O3 Dielectrics Towards Performance Enhancement Through Lateral Scaling and Passivation Optimization for Power Switching and RF Applications

Lavanya Repaka,J. Ajayan,Sandip Bhattacharya,B. Mounika

MICRO AND NANOSTRUCTURES (2025)

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Performance Evaluation of Gate-Recessed AlGaN/GaN T-Gated MOSHEMTs for Next-Generation Power Electronics

Lavanya Repaka, J. Ajayan,Sandip Bhattacharya

2025 3rd International Conference on Integrated Circuits and Communication Systems (ICICACS)pp.1-5, (2025)

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Improved DC/RF Performance in AlN/GaN/AlGaN/SiC MOSHEMTs with TiO2 As a Gate Dielectric

Gauri Deshpande, J. Ajayan,Sandip Bhattacharya

2025 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI) (2025): 1-4

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Aggressively Scaled T-Gated GaN-on-Silicon RF Power HEMT Featuring Step Graded SRL-AlGaN Buffer for Next Generation Broad Band Power Amplifiers

A. Akshaykranth,J. Ajayan,Sandip Bhattacharya, D. Nirmal, Santhosh Paramasivam,Gianluca Gatto, Amit Kumar

RESULTS IN ENGINEERING (2025)

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Analysis of Power Supply Voltage Drop and Delay in a Cascaded CMOS Inverter Circuit Using Pristine-GNR and Copper Interconnect Material

Manisha Gunda, Manaswini Madarapu, Hymavathi Dharavath, Tulasi Chityala,Sandip Bhattacharya,Subhajit Das

2025 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI) (2025): 1-6

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Investigation of Stacked Gate Dielectrics in AlGaN/GaN MOS-HEMTs for High-Voltage Applications

Lavanya Repaka, J. Ajayan,Sandip Bhattacharya

2025 3rd International Conference on Integrated Circuits and Communication Systems (ICICACS)pp.1-5, (2025)

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Impact of Gate Metals/High-K Materials and Lateral Scaling on the Performance of AlN/GaN/AlGaN-MOSHEMT on SiC Wafer for Future Microwave Power Amplifiers in RADAR & Communication Systems

Gauri Deshpande,J. Ajayan,Sandip Bhattacharya,B. Mounika,Amit Krishna Dwivedi, D. Nirmal

RESULTS IN ENGINEERING (2025)

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Investigation of Crosstalk Noise in a Tri-Interconnect Model Using Pristine and Copper Interconnects with Different Technologies and Wire Spacings

Aditi Thakur,Sandip Bhattacharya, Subhojit Das

2025 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI) (2025): 1-6

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A Novel L = 40 Nm AlN-GDC-HEMT on SiC Wafer with F/i of 400 GHz/3.18 Ma/mm for Future RF Power Amplifiers

B. Mounika,Asisa Kumar Panigrahy,J. Ajayan, N. Khadar Basha,Vakkalakula Bharath Sreenivasulu,M. Durga Prakash,Sandip Bhattacharya,D. Nirmal

IEEE Access (2024): 131906-131914

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A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications

Gauri Deshpande,Sandip Bhattacharya,J. Ajayan,B. Mounika,D. Nirmal

Journal of Electronic Materialspp.1-21, (2024)

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