s o akintundeDepartment of Physics University of Pretoria关注立即认领分享关注立即认领分享基本信息浏览量:0职业迁徙个人简介Area of Specialization: Physics of Materials under Irradiation研究兴趣论文共 3 篇作者统计合作学者相似作者按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选时间引用量主题期刊级别合作者合作机构Kinetics of growth of thin-films of Co2Si, Ni2Si, WSi2 and VSi2 during a reactive diffusion processS O Akintunde,P A SelyshchevResults in Physics(2016)引用4浏览0引用40The influence of radiation-induced vacancy on the formation of thin-film of compound layer during a reactive diffusion processS O Akintunde,P A SelyshchevJournal of Physics and Chemistry of Solids(2016)引用5浏览0引用50Formation of Chemical Compound Layer at the Interface of Initial Substances A and B with Dominance of Diffusion of the A AtomsPavlo Selyshchev,Samuel AkintundeWorld Academy of Science, Engineering and Technology, International Journal of Physical and Mathemat...(2014)引用23浏览0引用230作者统计合作学者合作机构D-Core合作者学生导师暂无相似学者,你可以通过学者研究领域进行搜索筛选数据免责声明页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn