Chang, S.W. - Div. of Reliability Assurance, Taiwan Semicond. Manuf. Co., Hsinchu|c|

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Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

K.-Y. Hsiang,F.-S. Chang, Z.-F. Lou, A. Aich, A. Senapati,J.-Y. Lee, Z.-X. Li, J.-H. Chen,C.-H. Liu,C. W. Liu, S. Maikap, P. Su,

IEEE Transactions on Electron Devicesno. 99 (2024): 1-6

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High-Endurance MoS2 FeFET with Operating Voltage Fess Than IV for eNVM in Scaled CMOS Technologies

Tsung-En Lee,Hung-Li Chiang, Chih-Yu Chang,Yuan-Chun Su,Shu-Jui Chang, Jui-Jen Wu, Bo-Jiun Lin,Jer-Fu Wang, Shu-Chih Haw,Shang-Jui Chiu, He-Liang Ching,Yan-Gu Lin,

2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)

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Physical Insights of Low Thermal Expansion Coefficient Electrode Stress Effect on Hafnia-Based Switching Speed

Y. -T. Tsai,C. -R. Liu,Y. -T. Chen,S. -M. Wang,Z. -K. Chen, C. -S. Pai, Z. -R. Haung,F. -S. Chang, Z. -X. Li, K. -Y. Hsiang,M. -H. Lee,Y. -T. Tang

arXiv (Cornell University) (2023)

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First-principles Calculations of High Thermal Conductivity in Germanium Carbide Channel Materials

S. -C. Lee,Y. -T. Chen,C. -R. Liu,S. -M. Wang,Y. -T. Tang,F. -S. Chang,Z. -X. Li,K. -Y. Hsiang,M. -H. Lee

arXiv (Cornell University) (2023)

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3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs

J.-Y. Lee,F.-S. Chang, K.-Y. Hsiang, P.-H. Chen, Z.-F. Luo,Z.-X. Li, J.-H. Tsai,C. W. Liu,Min-Hung Lee

VLSI Technology and Circuitspp.1-2, (2023)

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FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

K.-Y. Hsiang,J.-Y. Lee,F.-S. Chang, Z.-F. Lou, Z.-X. Li,Z.-H. Li, J.-H. Chen,C. W. Liu, T.-H. Hou,M. H. Lee

VLSI Technology and Circuitspp.1-2, (2023)

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Effect of deep margin elevation on interfacial gap development of CAD/CAM inlays after thermomechanical cycling (vol 46, pg 529, 2021)

W. Moon,S. H. Chang, J. Chang

OPERATIVE DENTISTRYno. 3 (2023): 348-348

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Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs

Abhas Mehta, Hisashi Shichijo, Jungwoo Joh,Chang Suh,Moon Kim

ECS Transactionsno. 2 (2023): 9-20

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Fatigue Mechanism of Antiferroelectric Hf_0.1Zr_0.9O₂ Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM

K.-Y. Hsiang, J.-Y. Lee, Z.-F. Lou,F.-S. Chang,Y.-C. Chen,Z.-X. Li,M. H. Liao,C. W. Liu, T.-H. Hou, P. Su,M. H. Lee

IEEE Transactions on Electron Devicesno. 4 (2023): 2142-2146

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Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications

K.-Y. Hsiang,J.-Y. Lee, Z.-F. Lou,F.-S. Chang, Z.-X. Li,C. W. Liu, T.-H. Hou, P. Su,M. H. Lee

2023 IEEE International Reliability Physics Symposium (IRPS)pp.1-4, (2023)

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