基本信息
浏览量:11

个人简介
Sergey I. Stepanov received the M.S. degree in optoelectronics from Saint Petersburg Electrotechnical University, Russia, in 1996, and the Ph.D. degree in physics from the University of Bath, U.K., in 2003. He has held various research positions at Cree EED, Bath University, IQE, and ITMO University. He is currently a Research Scientist with the Ioffe Institute. He has authored several chapters in scientific books and numerous research articles in refereed journals. His research interests include physics of semiconductor devices, wide bandgap semiconductors, crystal growth, and epitaxy.
研究兴趣
论文共 100 篇作者统计合作学者相似作者
按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
Materials Science in Semiconductor Processing (2024): 108778
Кристаллографияno. 1 (2024): 34-39
Crystallography Reportsno. 1 (2024): 23-28
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2024)
JOURNAL OF APPLIED PHYSICSno. 12 (2024)
Materialia (2023): 101942-101942
Письма в журнал технической физикиno. 2 (2023)
加载更多
作者统计
#Papers: 100
#Citation: 1104
H-Index: 20
G-Index: 29
Sociability: 6
Diversity: 2
Activity: 9
合作学者
合作机构
D-Core
- 合作者
- 学生
- 导师
数据免责声明
页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn