His most recent work involves the MOCVD growth of heteroepitaxial InAlGaN on sapphire substrates for lasers, LED's, photodetectors, and high-power transistors; the growth of InAlGaAsP-InP lasers; the growth of InGaAs-InP vertical-cavity surface-emitting lasers; and InGaAs -InP heterojunction bipolar transistors. In addition, he is exploring the III-V "native oxide" materials. His technical specialties include semiconductor materials and devices, epitaxial growth by metalorganic chemical vapor deposition, and heterojunction structures in III-V compound semiconductors.