Rongming Chu - Hughes Research Laboratories, HRL Laboratories, LLC

基本信息

Career Trajectory

Bio

Rongming Chu received the B.S. degree in physics from Nanjing University, Jiangsu, China, in 2002 and the M. Phil. degree in electrical and electronic engineering from The Hong Kong University of Science and Technology, Hong Kong in 2004. He is currently pursuing the Ph.D. degree in the Department of Electrical Engineering, University of South Carolina, Columbia. His research interests include the design, fabrication, and characterization of nitride semiconductor transistors.

Research Interests

Papers共 137 篇Author StatisticsCo-AuthorSimilar Experts

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Electrothermal Failure Physics of GaN Schottky Diodes under High-Temperature Forward Biasing

Nahid Sultan Al-Mamun, Yuxin Du,Jianan Song,Rongming Chu,Aman Haque

Micromachinesno. 3 (2025)

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Field-dependent Carrier Transport in Implanted Isolation Region of GaN Lateral Power Devices

Mansura Sadek, Yixin Xiong, Yuxin Du, Jesse T. Kemmerling, Rian Guan, Jianan Song, Xingyu Liu, Xing Wang,Andy Xie,Rongming Chu

APL Materialsno. 5 (2025): 051113-051113-8

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The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time

Jesse T. Kemmerling, Yuxin Du,Rongming Chu

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 2 (2025): 604-610

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Impact of P-GaN Ohmic Contact Resistivity on Switching Time of GaN Super-Heterojunction FETs

Yuxin Du,Jesse T. Kemmerling,Jianan Song, Keisuke Shinohara,Vivek Mehrotra,Rongming Chu

Device Research Conferencepp.1-2, (2024)

Cited1Views0EIWOSBibtex

Microstructural Changes in GaN and AlN under 950 MeV Au Swift Heavy Ion Irradiation

Mahjabin Mahfuz, Farshid Reza, Xingyu Liu,Rongming Chu,Maik Lang,Michael Snure,Xing Wang,Miaomiao Jin

Applied Physics Lettersno. 11 (2024)

Cited3Views0Bibtex

GaN Super-Heterojunction FETs with 10-Kv Blocking and 3-Kv Dynamic Switching

Jesse T. Kemmerling,Rian Guan,Mansura Sadek, Yixin Xiong,Jianan Song,Sang-Woo Han,Sundar Isukapati,Woongje Sung,Rongming Chu

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 2 (2024): 1153-1159

Cited5Views0EIWOSBibtex

Physics-based 3D Simulation of Single Event Transient Current in GaN High-Electron-mobility Transistor and Super-Heterojunction Field-Effect Transistor

Jianan Song, Anusmita Chakravorty,Miaomiao Jin,Rongming Chu

APPLIED PHYSICS LETTERSno. 17 (2024)

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Examining Composition-Dependent Radiation Response in AlGaN

Miaomiao Jin, Farshid Reza, Alexander Hauck, Mahjabin Mahfuz, Xing Wang,Rongming Chu,Blair Tuttle

arxiv（2024）

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2.3 Kv GaN Super-Heterojunction FET for Cryogenic Power Switching

Mansura Sadek,Jesse T. Kemmerling, Ajay Kumar Visvkarma,Rian Guan, Yixin Xiong,Jianan Song,James Spencer Lundh,Karl D. Hobart,Travis J. Anderson,Rongming Chu

Device Research Conferencepp.1-2, (2024)

Cited0Views0EIWOSBibtex

Monolithically Integrated GaN Photodetector and Bootstrapping Transimpedance Amplifier

Yixin Xiong,Rian Guan,Jesse T. Kemmerling, Yuxin Du,Mansura Sadek,Jianan Song,Andy Xie,Rongming Chu

IEEE ELECTRON DEVICE LETTERSno. 7 (2024): 1161-1164

Cited1Views0EIWOSBibtex

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