Qiang Yu - Logic Technology Development, Intel Corporation

基本信息

Career Trajectory

Bio

Qiang Yu (S'13) received the B.S. degree from Shanghai Jiao Tong University, Shanghai, China, in 2006, and the M.S. degree from Louisiana State University, Baton Rouge, LA, USA, in 2008, both in electrical engineering. He is currently a graduate student with the Charles, L. Brown Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA. His research focuses on applying micromachining techniques for sub-millimeter-wave components and sub-millimeter-wave metrology. He is also interested in microelectromechanical systems (MEMS), sensors and RFIC.

Research Interests

Papers共 28 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

Enabling Chip-To-Wafer Hybrid Bonding Scaling to 1um Pitch with Optimal Power Delivery Using New Bond Via Architectures

Golsa Naderi,Adel Elsherbini, Brandon M Rawlings, Shawna Liff, Saurabh Chauhan,Qiang Yu, Arian Rahimi, Cynthia Cooper, Theodros Bejitual, Phanindhar Shivapooja, Matthew Stolt, Md Imran Hossain, Cemil M Atay

2025 IEEE 75th Electronic Components and Technology Conference (ECTC)pp.20-24, (2025)

Cited0Views0EIWOSBibtex

Advancements in 300 Mm GaN-on-Si Technology with Industry’s First Circuit Demonstration of Monolithically Integrated GaN and Si Transistors

Qiang Yu, Ali A. Farid,Ibukunoluwa Momson,Jeffrey Garrett,Heli Vora,Samuel Bader,Ahmad Zubair,Pratik Koirala,Michael Beumer,Andrey Vyatskikh, Paul Nordeen,Thomas Hoff,Marko Radosavljevic,Said Rami,Frank O'Mahony,Han Wui Then

IEEE Microwave and Wireless Technology Lettersno. 6 (2024): 745-748

Cited0Views0EIWOSBibtex

Design Kit Development on a 300mm GaN-on-Si Demonstration Platform with Integrated Si Pmos

Samuel James Bader,Ahmad Zubair,Alvaro Latorre-Rey, Mikkel Hansen, Soumen Sarkar, Abdul Asif,Dimitri Frolov, Kaushik Narayanan,Jag Rangaswamy, Puneet Kanwar Kaur, Sanjeev Kumar, Nirmal Kundu, Shreyas Samraksh Jayaprakash, Abhijeet Khobragade, Yashwanth Pathivada,Qiang Yu, Jagannathan Vasudevan, Ibukun Momson,Said Rami,Heli Vora,Marko Radosavljevic,Pratik Koirala,Michael Beumer,Andrey Vyatskikh, Paul Nordeen,Thomas Hoff,Nachiket V. Desai,Han Wui Then

BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposiumpp.5-8, (2024)

Cited0Views0EIWOSBibtex

A 25.5-31Ghz Power Amplifier Using Enhancement-Mode High-K Dielectric GaN MOS-HEMTs in 300mm GaN-on-Si Technology

Qiang Yu,Han Wui Then,Ibukunoluwa Momson,Derek Thomson,Jeffrey Garrett,Said Rami

2023 IEEE/MTT-S International Microwave Symposium - IMS 2023pp.931-934, (2023)

Cited2Views0EIWOSBibtex

Enhancement-Mode 300-Mm GaN-on-Si(111) with Integrated Si CMOS for Future Mm-Wave RF Applications

Han Wui Then,M. Radosavljevic,Q. Yu,A. Latorre-Rey,H. Vora,S. Bader, I. Momson, D. Thomson,M. Beumer,P. Koirala,J. Peck,A. Oni,T. Hoff, R. Jordan,T. Michaelos,N. Nair, P. Nordeen, A. Vyatskikh,I. Ban,A. Zubair,S. Rami,P. Fischer

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERSno. 6 (2023): 835-838

Cited13Views0EIWOSBibtex

A Fully Integrated 3.2-4.7Ghz Doherty Power Amplifier in 300mm GaN-on-Si Technology

Qiang Yu,Derek Thomson,Han Wui Then,Alvaro Latorre-Rey,Marko Radosavljevic,Michael Beumer,Pratik Koirala,Nicole Thomas,Nityan Nair,Heli Vora,Samuel Bader

2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (2022)

Cited3Views0EIWOSBibtex

Low-Loss On-Chip Passive Circuits Using C4 Layer for RF, Mmwave and Sub-Thz Applications

Qiang Yu, Gwang-Soo Kim,Jeffrey Garrett,Derek Thomson,Georgios Dogiamis,Nathan Monroe,Ruonan Han,Yunzhe Ma,James Waldemer,Ye Seul Nam, Gustavo Beltran,Vijaya Neeli,Surej Ravikumar,Said Rami,Chris Pelto,Eric Karl

2022 IEEE/MTT-S International Microwave Symposium - IMS 2022（2022）

Cited1Views0EIWOSBibtex

High-Q On-Chip Capacitors Featuring ``Self-Inductance Cancellation'' for RF and Mm-Wave Applications

Arian Rahimi,Pratheesh Somarajan,Qiang Yu,Elham Mohammadi,Jeffrey Garrett,Said Rami, Kalyan C. Kolluru

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS（2022）

Cited1Views0EIWOSBibtex

Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (ronxqgg) of 3.1 Mohm-Nc at 40V and Ft/fmax of 130/680Ghz

Han Wui Then,M. Radosavljevic,P. Koirala,M. Beumer,S. Bader,A. Zubair,T. Hoff, R. Jordan,T. Michaelos,J. Peck,I. Ban,N. Nair,H. Vora,K. Joshi,I. Meric,A. Oni, N. Desai,H. Krishnamurthy,K. Ravichandran,J. Yu, S. Beach, D. Frolov,A. Hubert,A. Latorre-rey,S. Rami, J. Rangaswamy,Q. Yu,P. Fischer

2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM (2022)

Cited15Views0EIWOSBibtex

Author Statistics

Co-Author

Co-Institution

D-Core

合作者
学生
导师

No result temporarily, you can search similar Scholar with the same research interest

Data Disclaimer

The page data are from open Internet sources, cooperative publishers and automatic analysis results through AI technology. We do not make any commitments and guarantees for the validity, accuracy, correctness, reliability, completeness and timeliness of the page data. If you have any questions, please contact us by email: report@aminer.cn