Valery V. Preobrazhenskii

Andrey V. Vasev is a Research Scientist in the Laboratory of physical basis of epitaxy of semiconductor heterostructures in the A.V. Rzhanov Institute of Semiconductor Physics SB RAS. He earned his Master’s degree of physics at Novosibirsk State University in 1998 and his Ph.D. in physics of semiconductors at the A.V. Rzhanov ISP SB RAS in 2010. Now he is Senior Researcher of Laboratory of physical basis of epitaxy of semiconductor heterostructures His research interests include the RHEED and Ellipsometric investigation of processes occurring on semiconductors surface.