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Peter A. Houston received the B.Sc. degree (with first-class honors) in physics and the Ph.D. degree, both from Strathclyde University, Glasgow, U.K., in 1972 and 1975, respectively.
From 1975 to 1978, he worked with GEC Hirst Research Centre, where he developed liquid-phase epitaxial growth of GaAs structures for MESFETs. In 1978, he was a Lecturer with the Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, U.K., where he helped set up, and is currently Codirector of the Engineering and Physical Sciences Research Council (EPSRC) National Centre for III-V Technologies. From 1986 to 1987, he spent a one-year leave of absence at Bell Northern Research (now Nortel), Ottawa, ON, Canada, where he worked on the development of the heterojunction bipolar transistor (HBT). On his return from Canada, he was promoted to Senior Lecturer and, subsequently, Reader in October 1996. Currently, he is a Professor of electronic devices and Head of the Department of Electronic and Electrical Engineering, University of Sheffield. His research interests cover a wide range of III-V materials systems, HBT and HEMT device fabrication and modeling, ballistic transport effects, and piezoelectric strained layers.
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Santa Fe, NM, USAno. 4 (1993): 1225-1230
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