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Philip G. Neudeck (S'87–M'87–SM'98) received the B.S. (with distinction), M.S., and Ph.D. degrees in electrical engineering from Purdue University, West Lafayette, IN, in 1986, 1987, and 1991, respectively.
In 1991, he became the Lead Semiconductor Device Engineer with the NASA Glenn Research Center (known as NASA Lewis prior to 1999) SiC High Temperature Integrated Electronics and Sensors Program. He has overseen the design, modeling, fabrication, and electrical characterization of prototype SiC electronic devices being developed for high-temperature or high-power operation in aerospace-related systems. He has coauthored over 100 papers in the SiC device technology and crystal growth area over the past decade and is co-inventor of six SiC electronics technology patents to date. His most notable contributions to the SiC electronics field include the first demonstration of multikilovolt SiC rectifiers and identification of micropipes as crystal defects that limit the performance of SiC power devices. He is co-inventor of the widely utilized site competition dopant control methodology.
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MRS Online Proceedings Libraryno. 1 (2011): 107-112
ECS Transactionsno. 8 (2011): 163-176
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